News Article
Northrop Grumman`s Electronic Systems Sector Will Be Using Bede
Northrop Grumman's Electronic Systems sector will be using Bede Scientific's
D1 high resolution x-ray diffractometer. The tool will be used at Northrop
Grumann's Advanced Materials and Semiconductor Device Technology Center in
Maryland, USA. This instrument will be used primarily for the
characterisation of GaN-based epitaxial structures for high-speed electronic
devices. The instrument will incorporate Bede's latest version of its
control and data acquisition software - Bede Control 2.
Northrop Grumman's Electronic Systems sector will be using Bede Scientific's
D1 high resolution x-ray diffractometer. The tool will be used at Northrop
Grumann's Advanced Materials and Semiconductor Device Technology Center in
Maryland, USA. This instrument will be used primarily for the
characterisation of GaN-based epitaxial structures for high-speed electronic
devices. The instrument will incorporate Bede's latest version of its
control and data acquisition software - Bede Control 2.
D1 high resolution x-ray diffractometer. The tool will be used at Northrop
Grumann's Advanced Materials and Semiconductor Device Technology Center in
Maryland, USA. This instrument will be used primarily for the
characterisation of GaN-based epitaxial structures for high-speed electronic
devices. The instrument will incorporate Bede's latest version of its
control and data acquisition software - Bede Control 2.
